Increment to sub-version v1.2. Main changes are:
- Back and front silk screen
- LED resistors
There are no changes in the layout and any critical components.
Signed-off-by: Stefan Agner <stefan@agner.ch>
Modified PoE layout to account for GNDS-GND1 flow
and repositioned the noise retern capacitor.
Snubber was corrected for the transformer used and the switching
frequency. Some components were removed.
PoE Input filter was adjusted.
3.3 and 5V DCDC capacitor layout was optimised and unused components
were removed.
Signed-off-by: Dominik Sliwa <dominik@sliwa.io>
- Fix edge cut on lower right corner to make board size exact
- Update board charactristics
- Set grid origin back to 30, 30
- Update M.2 expansion silk screen (remove AI accelerator hint)
- Various silk screen reference designator fixes/improvements
- Add ESD warning logo
Signed-off-by: Stefan Agner <stefan@agner.ch>
- Update silk screen reference designators
- Update backside silk screen for Yellow revision 1.1
- Set U21 (SOIC-8 RTC) to assemble and U25 (MSOP-8) as DNP
- Update heatsink footprint to add heatsink outline to silk screen (#44)
- Mark orientation of D26, D27, D28 and D29 (fixes#39)
- Use pin-header footprint for PoE selector J13, it is now JP5
Signed-off-by: Stefan Agner <stefan@agner.ch>
